1.Institute of Physics SAS, Slovakia; 2.Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, Japan; 3.Institute of Electrical Engineering SAS, Slovakia
Abstract：Photoluminescence spectra of aSi:Hbased structures deposited on glass substrate measured at 6K are presented. Their nonGaussian character is interpreted as a result of presence of different phases in material. Presented results of analysis of numerical data obtained by fitting of these spectra indicates that they can be represented as a consequence of superposition of photoluminescence signal arising from two types of domains with different degrees of structural disordering. This is the issue of deposition process and corresponds to real situation from view of structural properties of amorphous hydrogenated silicon.
Brunner R, Pincik E, Kobayashi H, Kucera M, Takahashi M. 非均匀aSi:H层的光致发光光谱研究[J]. 冶金分析, 2012, 32(1): 43-47.
Brunner R, Pincik E, Kobayashi H, Kucera M, Takahashi M. Photoluminescence spectra of nonhomogeneous aSi:H layers. , 2012, 32(1): 43-47.
