Development of a semiconductor temperature control device and its application in inductively coupled plasma mass spectrometer

LI Ming; LI Kai; TANG Xing-bin; REN Li-zhi

doi:10.13228/j.boyuan.issn1000-7571.010663

LI Ming, LI Kai, TANG Xing-bin, REN Li-zhi

Metallurgical Analysis ›› 2019, Vol. 39 ›› Issue (6) : 60-64.

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Metallurgical Analysis ›› 2019, Vol. 39 ›› Issue (6) : 60-64. DOI: 10.13228/j.boyuan.issn1000-7571.010663

Development of a semiconductor temperature control device and its application in inductively coupled plasma mass spectrometer

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2019, 39(6): 60-64 https://doi.org/10.13228/j.boyuan.issn1000-7571.010663

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Received	Published
2019-01-25	2019-06-28
Issue Date
2019-01-25

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