Determination of six impurity components on surface of high-content silicon carbide by inductively coupled plasma atomic emission spectrometry

BIAN Da-yong

Metallurgical Analysis ›› 2018, Vol. 38 ›› Issue (5) : 72-77.

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Metallurgical Analysis ›› 2018, Vol. 38 ›› Issue (5) : 72-77. DOI: 10.13228/j.boyuan.issn1000-7571.010286

Determination of six impurity components on surface of high-content silicon carbide by inductively coupled plasma atomic emission spectrometry

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 38(5): 72-77 https://doi.org/10.13228/j.boyuan.issn1000-7571.010286

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