辉光放电磁控溅射靶材利用率和刻蚀均匀性方法研究与进展

doi:10.13228/j.boyuan.issn1000-7571.011324

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摘要

磁控溅射靶表面磁场的非均匀分布使靶的溅射性能受到了靶材利用率低和刻蚀均匀性差的制约,因此寻求一种较高靶材利用率且在靶材表面的大面积范围内均匀溅射的方法成为研究的热点。简要介绍了辉光放电磁控溅射技术基本原理,综述了近20年来国内外研究机构和学者提高靶材利用率及刻蚀均匀性的主要方法。对已报道的优化磁极结构、辅助磁场、动态磁场等方法,以及反常刻蚀改进方法进行了详细介绍,并对比分析了各种方法优、缺点。对磁控溅射靶材优化方法的发展趋势及用途拓展进行了展望。

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	王永清
	沈懿璇
	万真真
	余兴
	王海舟

关键词 ：磁控溅射, 靶材, 利用率, 刻蚀均匀性, 磁极结构优化, 磁场, 反常刻蚀

Abstract：

The non-uniform distribution of magnetic field on the surface of magnetron sputtering target limits the sputtering performance of the target due to the low utilization ratio of the target material and the poor uniformity of etching. Therefore, it is a hot topic to seek a method with high target utilization ratio and uniform sputtering over a large area of target surface. The basic principle of glow discharge magnetron sputtering technology was briefly introduced. The main methods to improve the utilization ratio of target materials and the uniformity of etching in recent 20 years were reviewed. The reported methods, including optimization of magnetic pole structure, auxiliary magnetic field and dynamic magnetic field as well as the improved method of abnormal etching were introduced in detail. The advantages and disadvantages of various methods were compared and analyzed. The development trend and application of target material optimization method for magnetron sputtering were prospected.

Key words： magnetron sputtering target utilization ratio etching uniformity optimization of magnetic pole structure magnetic field abnormal etching

收稿日期: 2020-10-23

ZTFLH:

O657.31

基金资助:

河北省专业学位研究生教学案例建设项目(KCJSZ2018010);钢铁研究总院与河北大学合作课题(2019—2020);河北大学研究生创新资助项目(HBU2021ss05)

作者简介: 王永清(1962—),男,教授,博士,主要研究领域为传感器应用和分析检测仪器;E-mail:125254397@qq.com

引用本文:

王永清, 沈懿璇, 万真真, 余兴, 王海舟. 辉光放电磁控溅射靶材利用率和刻蚀均匀性方法研究与进展[J]. 冶金分析, 2021, 41(8): 54-63. WANG Yongqing, SHEN Yixuan, WAN Zhenzhen, YU Xing, WANG Haizhou. Progress in methods to improve the utilization ratio and erosion uniformity of target in glow discharge magnetron sputtering. , 2021, 41(8): 54-63.

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http://yjfx.chinamet.cn/CN/10.13228/j.boyuan.issn1000-7571.011324 或 http://yjfx.chinamet.cn/CN/Y2021/V41/I8/54

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