Determination of eleven trace impurity elements in indium tin oxide target material by inductively coupled plasma atomic emission spectrometry after microwave digestion
WANG Zhi-ping, SUN Hong-tao, WANG Qiao
Ningxia Co., Ltd. of Northwest Rare Metal Materials Research Institute, State Key Laboratory of Special Rare Metal Materials, Shizuishan 753000, China
Abstract：The sample was treated by microwave digestion in hydrochloric acid. Fe 238.204nm, Ca 317.933nm, Mg 285.213nm, Al 396.152nm, Cd 214.438nm, Cr 267.716nm, Cu 324.754nm, Ni 221.647nm, Pb 220.353nm, Si 251.611nm and Tl 190.856nm were selected as the analytical lines. The calibration curves were prepared by matrix matching method to eliminate the influence of matrix effect. The contents of iron, calcium, magnesium, aluminum, cadmium, chromium, copper, nickel, lead, silicon and thallium were simultaneously determined by inductively coupled plasma atomic emission spectrometry (ICP-AES). Consequently the analysis method of impurity elements (including iron, calcium, magnesium, aluminum, cadmium, chromium, copper, nickel, lead, silicon and thallium) in indium tin oxide target material was established. The linear correlation coefficients of calibration curves were higher than 0.9995. The low limit of determination of elements was in range of 0.30-1.78μg/g. The proposed method was applied for the determination of iron, calcium, magnesium, aluminum, cadmium, chromium, copper, nickel, lead, silicon and thallium in two samples of indium tin oxide target material. The relative standard deviations (RSD, n=11) of measured results were between 1.1% and 8.2%, and the recoveries were between 92% and 108%.
王志萍, 孙洪涛, 王巧. 微波消解-电感耦合等离子体原子发射光谱法测定氧化铟锡靶材中11种痕量杂质元素[J]. 冶金分析, 2018, 38(5): 60-65.
WANG Zhi-ping, SUN Hong-tao, WANG Qiao. Determination of eleven trace impurity elements in indium tin oxide target material by inductively coupled plasma atomic emission spectrometry after microwave digestion. , 2018, 38(5): 60-65.
阮进,陈敬超,于杰,等.ITO靶材的研究与发展[J].电工材料,2008(2):35-42.RUAN Jin,CHEN Jing-chao,YU Jie,et al.Research and development of ITO target material[J].Electrotechnical Materials,2008(2):35-42.
[2]
吴文启,黄煦,李奋,等.EDTA滴定法测定废铟锡氧化物靶材中铟[J].冶金分析,2007,27(11):37-39.WU Wen-qi,HUANG Xu,LI Fen,et al.Determination of indium in waste indium-tin oxide target by EDTA titration[J].Metallurgical Analysis,2007,27(11):37-39.
[3]
张红梅,陈锐.ITO粉及ITO靶材中铟的测定-EDTA容量法[J].稀有金属,2003,27(1):188-190.ZHANG Hong-mei,CHEN Rui.Determination of indium in ITO powder and ITO target by EDTA titration[J].Chinese Journal of Rare Metals,2003,27(1):188-190.
[4]
刘传仕.电感耦合等离子体发射光谱法测定铟中杂质元素[J].矿冶,2005,14(2):86-89.LIU Chuan-shi.Determination of impurity elements in indium by ICP-OES[J].Mining&Metallurgy,2005,14(2):86-89.
[5]
熊晓燕,王津.金属铟中杂质元素的ICP-AES测定[J].广东有色金属学报,2006, 16(1):56-58.XIONG Xiao-yan,WANG Jin.Determination of Pb,Cd,Fe,Cu,Zn,AI,Sn,Ti,Tl and As in indium with ICP-AES[J].Journal of Guangdong Non-ferrous Metals,2006,16(1): 56-58.
[6]
解原.等离子发射光谱法测定精铟中的痕量杂质元素[J].化学分析计量,2007,16(3):28-30.XIE Yuan.Determination of trace impurity elements in pure indium by ICP-AES[J].Chemical Analysis and Meterage,2007,16(3):28-30.
[7]
段学臣,陈振华,周立,等.超细氧化铟-氧化锡(ITO)复合粉末的研制与结构特性[J].稀有金属,1998,22(5):396.DUAN Xue-chen,CHEN Zhen-hua,ZHOU Li,et al.Preparation and structural characterization of In2O3-SnO2 (ITO) ultrafine composite powder[J].Chinese Journal of Rare Metals,1998,22(5):396.
[8]
孙洪涛,王晓艳,邓培,等.ICP-AES法测定氧化铟-氧化锡(ITO)超细复合粉末中痕量杂质[J].宁夏工程技术,2003,2(3):232-234.SUN Hong-tao,WANG Xiao-yan,DENG Pei.Determination of trace impurities in In2O3-SnO2 (ITO) ultrafine composite powder by ICP-AES[J].Ningxia Engineering Technology,2003,2(3):232-234.
[9]
周勇义,谷学新,范国强,等.微波消解技术及其在分析化学中的应用[J].冶金分析,2004,24(2):30-36.ZHOU Yong-yi,GU Xue-xin,FAN Guo-qiang.Applicationof microwave digestion in anaIytical chemistry[J].Metallurgical Analysis,2004,24(2):30-36.
[10]
陶锐,高舸.电感耦合等离子体发射光谱分析中无机酸基体效应研究(1)无机酸基体应及其机理[J].理化检验:化学分册,2005,41(1):67-71.TAO Rui,GAO Ge.Matrix effect of inorgnic acids in ICP-AES analysis (1) matrix effect of inorgnic acids and its mechanism[J].Physical Tests and Chemical Analysis Part B:CHEM.ANAL.,2005,41(1):67-71.
