Abstract：Silicon carbide is a kind of most widely used and cost-optimal refractory raw material. Since the trade of silicon carbide is active, it is necessary to rapidly and accurately determine the surface impurity components. The sample was dissolved in hydrofluoric acid and nitric acid. After perchloric acid fuming to almost dryness, the soluble salts were dissolved with hydrochloric acid. The testing components could be separated from silicon carbide by filtration. Fe 259.939nm, Al 394.401nm, Ca 317.933nm, Mg 285.213nm, K 766.490nm and Na 589.592nm were selected as the analytical lines. The contents of iron, aluminum, calcium, magnesium, potassium oxide and sodium oxide were determined by inductively coupled plasma atomic emission spectrometry (ICP-AES). Consequently the analysis method of impurity components (iron, aluminum, calcium, magnesium, potassium oxide and sodium oxide) on surface of high-content silicon carbide by ICP-AES was established. The linearity of calibration curves was good for iron (0.020%-0.50%), aluminum and calcium (0.020%-0.20%), magnesium, potassium oxide and sodium oxide (0.0020%-0.020%). The linear correlation coefficients were higher than 0.9998. The detection limits were in range of 0.000042%-0.00064% (mass fraction). The proposed method was applied for the determination of iron, aluminum, calcium, magnesium, potassium oxide and sodium oxide on surface of silicon carbide sample, and the relative standard deviations (RSD, n=10) of measured results were between 1.9% and 9.5%. The contents of iron, aluminum, calcium, magnesium, potassium oxide and sodium oxide on surface of silicon carbide sample were determined according to the experimental method, and the found results were consistent with those obtained by national standard method.
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