Determination of boron in solar grade silicon by inductively coupled plasma atomic emission spectrometry
SUN Dong-ya1,HE Li-wen2
1. College of Materials Science & Engineering,Xiamen University of Technology,Xiamen 361024,China;2. College of Materials Science & Engineering,Huaqiao University,Xiamen 361021,China
Abstract：The trace boron in solar grade silicon(SOG-Si) was determined by inductively coupled plasma atomic emission spectrometry(ICP-AES). The silicon sample was dissolved in mixed solution of nitric acid and hydrofluoric acid under heating in PFA container at about 110 ℃, and 0.3 mL of mannitol was added to protect boron.Electronic grade silicon (EG-Si) was dissolved by reagent of metal oxide semiconductor (MOS) level in class 1000 clean room, so the boron in sample blank was less than 1 μg/L and the silicon matrix effect can be partly inhibited. Under the optimal condition of instrument, the detection limit of method was 18.10 μg/L and the recovery was 92%-108% with the relative standard deviation(RSD) not more than 7.2%(n=11)at the spectra line of B 182.641 nm. The found results were consistent with those of inductively coupled plasma mass spectrometry (ICP-MS) and glow discharge mass spectrometry (GDMS).
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