Abstract：The analysis conditions of chromium and silicon in nickel-based brazing material by inductively coupled plasma atomic emission spectrometry (ICP-AES) were discussed. After the nickel-based brazing material was dissolved with aqua regia-hydrofluoric acid mixed acid, and matrix effect was reduced by matrix matching, chromium and silicon in the sample were determined by ICP-AES with spectral line of 267.716(125) nm and 251.612(133) nm as the analytical lines for chromium and silicon respectively. This proposed method was applied to the determination of chromium and silicon in actual samples and the results were consistent with those obtained by ammonium persulfate oxidization titration method and perchloric acid dehydration method. The relative standard deviation (RSD, n=6) of chromium and silicon was 0.55%-0.73% and 0.71%-1.0%, respectively. The recoveries were 100%-101% and 99%-100%, respectively.
杨丽, 王金阳, 张庸. 电感耦合等离子体原子发射光谱法测定镍基钎焊料中铬和硅[J]. 冶金分析, 2013, 33(6): 63-66.
YANG Li ,WANG Jin-yang,ZHANG Yong. Determination of chromium and silicon in nickel-based brazing material by inductively coupled plasma atomic emission spectrometry. , 2013, 33(6): 63-66.
