1. Institute of Physics SAS, Dubravska cesta 9, 845 11 Bratislava, Slovak Republic; 2. ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan; 3. Faculty of Chemical and Food Technology and Applied Photochemistry, Radlinskeho 9, SUT, 812 39 Bratislava, Slovak Republic
Abstract：The study deals with electrical and optical properties of very thin oxide/6H-SiC structures prepared by wet chemical manner-nitric acid oxidation at 120 ℃ and also by combination of low temperature wet oxidation process and higher temperature annealing. For analysis of electrical interface properties, charge version of deep level transient spectroscopy was used. Optical properties of very thin oxide/6H-SiC structures were investigated by fourier transform infrared spectroscopy-attenuated total reflection. Strong transformations of interface defect structure were recognized in dependence on applied technological conditions.
Pincik E, Kobayashi H, Madani M, Rusnak J, Takahashi M, Mikula M, Brunner R. 极薄氧化物/6H-SiC结构的电学和光学性质研究[J]. 冶金分析, 2011, 31(12): 15-20.
Pincik E, Kobayashi H, Madani M, Rusnak J, Takahashi M, Mikula M, Brunner R. On electrical and optical properties of very thin oxide/6H-SiC structures. , 2011, 31(12): 15-20.
